1/f noise degradation caused by Fowler-Nordheim tunneling stress in MOSFETs

被引：1

作者：

Toita, M ^{[1
]}

Sugawa, T ^{[1
]}

Teramoto, A ^{[1
]}

Akaboshi, T ^{[1
]}

Imai, H ^{[1
]}

Ohmi, T ^{[1
]}

机构：

[1] Tohoku Univ, Management Sci & Technol Dept, Sendai, Miyagi 9808579, Japan

来源：

41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2003年

关键词：

1/f noise; MOSFET; Fowler-Nordheim tunneling; plasma damage; border traps;

D O I：

10.1109/RELPHY.2003.1197764

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We focus on I If noise appears in MOSFETs. In wafer fabrication processes, plasma discharge is often used for etching, photoresist ashing, plasma enhanced CVD, and so on. After gate electrode formation, an electrical field higher than the device operation limit might be applied between the gate and substrate due to, so called, plasma damage. Such high field stress can result in a significant increase in low frequency noise in MOSFETs. The purpose of this work is to investigate in detail the degradation of 1/f noise levels caused by Fowler-Nordheim tunneling stress.

引用

页码：313 / 317

页数：5

共 50 条

[1] Comparative Study of 1/f Noise Degradation Caused by Fowler-Nordheim Tunneling Stress in Silicon Nanowire Transistors and FinFETs
Wei, Chengqing
Xiong, Yong-Zhong
Zhou, Xing
Singh, Navab
Yuan, Xiao-Jun
Lo, Guo Qiang
Chan, Lap
Kwong, Dim-Lee
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (10) : 2774 - 2779
[2] Special features of Fowler-Nordheim stress degradation of SiC-MOSFETs
Murakami, Eiichi
Oda, Kazuhiro
Takeshita, Tatsuya
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (04)
[3] Determination of the Fowler-Nordheim tunneling parameters from the Fowler-Nordheim plot
Chiou, YL
Gambino, JP
Mohammad, M
[J]. SOLID-STATE ELECTRONICS, 2001, 45 (10) : 1787 - 1791
[4] On interface and oxide degradation in VLSI MOSFETs - Part II: Fowler-Nordheim stress regime
Esseni, D
Bude, JD
Selmi, L
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (02) : 254 - 263
[5] Evolution of 1/f noise in Fowler-Nordheim and hot-carrier degraded n-MOSFETs
Ren, L
Ohkonin, S
Ilegems, M
[J]. NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE, 1997, : 253 - 256
[6] FOWLER-NORDHEIM TUNNELING IN MIS STRUCTURES
KRIEGER, G
SWANSON, RM
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1237 - 1238
[7] The change in parameters of Fowler-Nordheim tunneling current in ultrathin MOSFETs under constant high field stress
Huo, ZL
Wei, JL
Mao, LF
Tan, CH
Xu, MZ
[J]. CHINESE JOURNAL OF ELECTRONICS, 2003, 12 (02) : 290 - 292
[8] A new oxide degradation mechanism for stresses in the Fowler-Nordheim tunneling regime
Martin, A
Suehle, JS
Chaparala, P
OSullivan, P
Mathewson, A
[J]. 1996 IEEE INTERNATIONAL RELIABILITY PHYSICS PROCEEDINGS, 34TH ANNUAL, 1996, : 67 - 76
[9] FOWLER-NORDHEIM TUNNELING IN IMPLANTED MOS DEVICES
WOLTERS, DR
PEEK, HL
[J]. SOLID-STATE ELECTRONICS, 1987, 30 (08) : 835 - 839
[10] Electrical conductance from the Fowler-Nordheim tunneling
Grado-Caffaro, MA
Grado-Caffaro, M
[J]. OPTIK, 2005, 116 (06): : 299 - 300

← 1 2 3 4 5 →