Demonstration of Fowler-Nordheim Tunneling in Simple Solution-Processed Thin Films

被引：15

作者：

Perkins, Cory K. ^{[1
]}

Jenkins, Melanie A. ^{[2
]}

Chiang, Tsung-Han ^{[2
]}

Mansergh, Ryan H. ^{[1
]}

Gouliouk, Vasily ^{[1
]}

Kenane, Nizan ^{[1
]}

Wager, John F. ^{[2
]}

Conley, John F., Jr. ^{[2
]}

Keszler, Douglas A. ^{[1
]}

机构：

[1] Oregon State Univ, Dept Chem, 153 Gilbert Hall, Corvallis, OR 97331 USA

[2] Oregon State Univ, Sch Elect Engn & Comp Sci, Corvallis, OR 97331 USA

来源：

ACS APPLIED MATERIALS & INTERFACES | 2018年 / 10卷 / 42期

基金：

美国国家科学基金会;

关键词：

solution-processed Al2O3; Fowler-Nordheim tunneling; MIM diodes; quantum tunneling; flat-Al-13; nanocluster; LOW-TEMPERATURE; OXIDE; ALUMINUM(III); NANOCLUSTERS; HYDROLYSIS; PRECURSORS; DEPOSITION; INKS;

D O I：

10.1021/acsami.8b08986

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The production of high-quality thin-film insulators is essential to develop advanced technologies based on electron tunneling. Current insulator deposition methods, however, suffer from a variety of limitations, including constrained substrate sizes, limited materials options, and complexity of patterning. Here, we report the deposition of large-area Al2O3 films by a solution process and its integration in metal insulator metal devices that exhibit I-V signatures of Fowler-Nordheim electron tunneling. A unique, high-purity precursor based on an aqueous solution of the nanocluster flat-Al-13 transforms to thin Al2O3 insulators free of the electron traps and emission states that commonly inhibit tunneling in other films. Tunneling is further confirmed by the temperature independence of device current.

引用

页码：36082 / 36087

页数：6

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