Ka-band MMIC GaN Doherty Power Amplifiers: Considerations on Technologies and Architectures (invited)

被引：2
|
作者：
Piacibello, Anna [1 ,2 ]
Camarchia, Vittorio [2 ]
机构：
[1] Microwave Engn Ctr Space Applicat MECSA, Rome, Italy
[2] Politecn Torino, Turin, Italy
来源：
2021 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM (IWS 2021) | 2021年
关键词：
Doherty; GaN; power amplifiers; satellite; 5G; DESIGN;
D O I：
10.1109/IWS52775.2021.9499592
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a comparison of two sample GaN technologies, one on Silicon and the other on Silicon Carbide substrate, when applied to the design of an integrated Doherty power amplifier. Two different target applications are considered, namely the satellite Ka-band downlink (173-20.3 GHz) and terrestrial communications in the n257 FR2 5G band (26.5-29.5 GHz), with different specifications but similar absolute frequency range. Considerations are made highlighting advantages and disadvantages of the two technologies for the design of high frequency MMIC Doherty Power Amplifiers in the presented scenarios.
引用
收藏
页数：3
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