A Ka-Band 40 W Output Power and 30 % PAE GaN MMIC Power Amplifier for Satellite Communication

被引：0
|
作者：
Nakatani, Keigo [1 ]
Yamaguchi, Yutaro [1 ]
Tsuru, Masaomi [1 ]
机构：
[1] Mitsubishi Electr Corp, Informat Technol R&D Ctr, Ofuna 5-1-1, Kamakura, Kanagawa 2478501, Japan
来源：
2021 16TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2021) | 2021年
关键词：
Ka-band; GaN; power amplifiers; MMIC;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a Ka-band 40 W power and 30 % PAE GaN power amplifier MMIC using 0.15 mu m gate-length GaN on SiC transistor with ISV structure. The fabricated 3-stage single-ended GaN power amplifier MMIC achieves 45.0 - 46.2 dBm output power and 23-30 % PAE over the 26 - 31 GHz band (FBW=17.5 %) under pulsed condition.
引用
收藏
页码：285 / 288
页数：4
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