Room temperature imaging at 1.63 and 2.54 THz with field effect transistor detectors

被引：37

作者：

Nadar, S. ^{[1
,2
]}

Videlier, H. ^{[1
,2
]}

Coquillat, D. ^{[1
,2
]}

Teppe, F. ^{[1
,2
]}

Sakowicz, M. ^{[1
,2
]}

Dyakonova, N. ^{[1
,2
]}

Knap, W. ^{[1
,2
]}

Seliuta, D. ^{[3
]}

Kasalynas, I. ^{[3
]}

Valusis, G. ^{[3
]}

机构：

[1] Univ Montpellier 2, Etud Semicond Grp, F-34095 Montpellier, France

[2] CNRS, UMR 5650, F-34095 Montpellier, France

[3] Lithuania Acad Sci, Inst Semicond Phys, THz Atelier Grp, LT-01108 Vilnius, Lithuania

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 108卷 / 05期

关键词：

QUANTUM-CASCADE LASER; PLASMA-WAVES; TERAHERTZ;

D O I：

10.1063/1.3463414

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs nanometric field effect-transistors are used for room temperature single-pixel imaging using radiation frequencies above 1 THz. Images obtained in transmission mode at 1.63 THz are recorded using transistors operating in a photovoltaic mode with spatial resolution of 300 mu m and voltage sensitivity of about 8 mV/W. A reduction in response with increasing frequency was observed and mitigated by the application of a source-drain current, leading to the demonstration of imaging at up to 2.54 THz. (c) 2010 American Institute of Physics. [doi:10.1063/1.3463414]

引用

页数：5

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