III-V Based Room Temperature THz Detectors

被引：0
|
作者：
Perera, A. G. Unil [1 ]
Jayaweera, P. Viraj [1 ]
Matsik, Steven G. [1 ]
Liu, Hui Chun [2 ]
机构：
[1] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA
[2] CNR, Inst Microstruct Sci, Ottawa, ON K1A OR6, Canada
来源：
2008 33RD INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES, VOLS 1 AND 2 | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Results are reported on a GaAs/AlGas based THz detector operating up to room temperature. The detector gave a response of 4 AM at 330 K and 0.015 A/W at 309 K indicating the response is due to effects of thermally generated carriers. By optimizing the material it should be possible to improve the detector response.
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页码：633 / +
页数：2
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