Room Temperature Terahertz Imaging by a GaAs-HEMT Transistor Associated with a THz Time Domain Spectrometer

被引：0
|
作者：
El Fatimy, A. [1 ,2 ]
Abraham, E. [1 ]
Nguema, E. [1 ]
Mounaix, P. [1 ]
Teppe, F. [3 ]
Knap, W. [2 ,3 ]
Otsuji, T. [2 ]
机构：
[1] Univ Bordeaux 1, CPMOH, CNRS, UMR 5798, F-33405 Talence, France
[2] Tohoku Univ, RIEC, Sendai, Miyagi 9808577, Japan
[3] Univ Montpellier, CNRS, F-34950 Montpellier, France
来源：
2008 33RD INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES, VOLS 1 AND 2 | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrated a room-temperature detection of terahertz radiation with a plasma wave nanometric transistor. The detection is resonant and can be efficient for terahertz time-resolved imaging.
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页码：673 / +
页数：2
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