Room Temperature Imaging above one Terahertz by Field Effect Transistor as Detector

被引：0

作者：

Nadar, S. ^{[1
]}

Coquillat, D. ^{[1
]}

Sakowicz, M. ^{[1
]}

Videlier, H. ^{[1
]}

Klimenko, O. ^{[1
]}

Teppe, F. ^{[1
]}

Dyakonova, N. ^{[1
]}

Knap, W. ^{[1
]}

Seliuta, D. ^{[2
]}

Kasalynas, I. ^{[2
]}

Valusis, G. ^{[2
]}

机构：

[1] Univ Montpellier 2, Etud Semicond Grp, CNRS, UMR 5650, F-34095 Montpellier, France

[2] Inst Semicond Phys, LT-01108 Vilnius, Lithuania

来源：

35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010) | 2010年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs field effect-transistors are used for single-pixel imaging using frequencies above 1 THz at 300 K. Images obtained in transmission mode at 1.63 THz are recorded with spatial resolution of 300 mu m. We demonstrate that, with applied drain to source current, the imaging at up to 2.5 THz is possible.

引用

页数：1

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