Characterization of silicon field effect transistor sub-THz detectors for imaging systems

被引：0
|
作者：
Foeldesy, Peter [1 ]
机构：
[1] Hungarian Acad Sci MTA SZTAKI, Comp & Automat Res Inst, Cellular Sensory & Opt Wave Comp Lab, Budapest, Hungary
来源：
2012 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS 2012) | 2012年
关键词：
TERAHERTZ RADIATION;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This document reports various aspects of silicon field-effect transistor structures response under high frequency continuous wave and pulsed irradiation. The detectors have been manufactured in standard 0.18 um CMOS technology. Their response show formerly predicted behavior and novel effects. Implementing a pair of non-antenna coupled gate is found to increase the sensitivity. Several structures reveal additional effects like polarity change depending on gate source potential and drain current. A responsivity enhancement technique is presented as well in not noise free realistic setups.
引用
收藏
页码：934 / 937
页数：4
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