Gate-All-Around GaN Nanowire FET as a Potential Transistor at 5 nm Technology for Low-Power Low-Voltage Applications

被引：1
|
作者：
Thakur, Rajiv Ranjan [1 ]
Chaturvedi, Nidhi
机构：
[1] CSIR, Cent Elect Engn Res Inst, Pilani 333031, Rajasthan, India
来源：
NANO | 2021年 / 16卷 / 08期
关键词：
GaN NWFET; effective mass; quantum confinement; NEGF framework; INTERFACE; PERFORMANCE; GENERATION; MOSFETS;
D O I：
10.1142/S179329202150096X
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this paper, design and parameter optimization for the performance analysis of a Gate-All-Around GaN Nanowire Field Effect Transistor (GAA GaN NWFET) has been carried out based on the various quantum ballistic simulation models. The simulation results show a novel way to change the device mode of operation from Depletion-mode (D-Mode) to Enhancement mode (E-Mode) and vice-versa by varying the thickness of the nanowire channel (Tnw), which has not been reported yet to the best of our knowledge. Also, the paper reveals novel approaches (i) threshold voltage (Vth) tuning using metal contact length (Lm), (ii) threshold voltage (Vth) tuning using metal electrode work functions (phi ms) and (iii) threshold voltage (Vth) tuning using metal contact width (Cm). The device has an Ion/Ioff ratio of 10(5), suppressed off-state leakage in the range of 10-10-10-11A. The simulation work has been carried out on a commercially available ATLAS device simulator from Silvaco. In this paper, the design and parameter optimization for the performance analysis of a Gate-All-Around GaN Nanowire Field Effect Transistor (GAA GaN NWFET) has been carried out based on the various quantum ballistic simulation models. The simulation results show a novel way to change the device mode of operation from Depletion-mode (D-Mode) to Enhancement mode (E-Mode) and vice-versa by varying the thickness of the nanowire channel (T-nw), which has not been reported yet to the best of our knowledge. Also, the paper reveals novel approaches: (i) threshold voltage (V-th) tuning using metal contact length (L-m), and (ii) threshold voltage (V-th) tuning using metal electrode work functions (phi(ms)), and (iii) threshold voltage (V-th) tuning using metal contact width (C-m). The device has an I-on/I-off ratio of 10(5), suppressed off-state leakage in the range of 10(-10)-10(-11) A. The simulation work has been carried out on a commercially available ATLAS device simulator from Silvaco.
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页数：12
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