Features of photoluminescence of uniformly and selectively erbium doped silicon structures produced by the sublimation MBE method

被引：0
|
作者：
Andreev, BA [1 ]
Bresler, MS
Gusev, OB
Krasil'nik, ZF
Kuznetsov, VP
Soldatkin, AO
Yassievich, IN
机构：
[1] Russian Acad Sci, Inst Microstruct Phys, Nizhnii Novgorod, Russia
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA | 2001年 / 65卷 / 02期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：271 / 275
页数：5
相关论文
共 50 条
  • [41] Photoluminescence of erbium-doped silicon: Excitation power and temperature dependence
    Thao, DTX
    Ammerlaan, CAJ
    Gregorkiewicz, T
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (03) : 1443 - 1455
  • [42] Photoluminescence excitation spectroscopy of erbium-doped silicon-rich silicon oxide
    Shin, JH
    Seo, SY
    Kim, S
    Bishop, SG
    APPLIED PHYSICS LETTERS, 2000, 76 (15) : 1999 - 2001
  • [43] Photoluminescence study of silicon-doped GaN grown by MBE on GaAs substrates
    Orton, JW
    Lacklison, DE
    Andrianov, AV
    Cheng, TS
    Dewsnip, DJ
    Foxon, CT
    Jenkins, LC
    Hooper, SE
    SOLID-STATE ELECTRONICS, 1997, 41 (02) : 219 - 222
  • [44] SMBE grown uniformly and selectively doped Si:Er structures for LEDs and lasers
    Krasilnik, ZF
    Aleshkin, VY
    Andreev, BA
    Gusev, OB
    Jantsch, W
    Krasilnikova, LV
    Kryzhkov, DI
    Kuznetsov, VP
    Shengurov, VG
    Shmagin, VB
    Sobolev, NA
    Stepikhova, MV
    Yablonsky, AN
    TOWARDS THE FIRST SILICON LASER, 2003, 93 : 445 - 454
  • [45] Cathodoluminescence and photoluminescence comparative study of erbium-doped silicon-rich silicon oxide
    Cueff, Sebastien
    Labbe, Christophe
    Dierre, Benjamin
    Cardin, Julien
    Khomenkova, Larysa
    Fabbri, Filippo
    Sekiguchi, Takashi
    Rizk, Richard
    JOURNAL OF NANOPHOTONICS, 2011, 5
  • [46] Study of the oxygen role in the photoluminescence of erbium doped nanocrystalline silicon embedded in a silicon amorphous matrix
    Cerqueira, M. F.
    Losurdo, M.
    Monteiro, T.
    Stepikhova, M.
    Soares, M. J.
    Peres, M.
    Alves, E.
    Conde, O.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) : 1148 - 1151
  • [47] Luminescent erbium-doped porous silicon bilayer structures
    Gu, LL
    Xiong, ZH
    Chen, G
    Xiao, ZS
    Gong, DW
    Hou, XY
    Wang, X
    ADVANCED MATERIALS, 2001, 13 (18) : 1402 - 1405
  • [48] Fabrication and photoluminescence properties of erbium doped size-controlled silicon nanocrystals
    Heitmann, J
    Schmidt, M
    Zacharias, M
    Timoshenko, VY
    Lisachenko, MG
    Kashkarov, PK
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 105 (1-3): : 214 - 220
  • [49] Infrared photoluminescence from erbium-doped spark-processed silicon
    Kim, Kwanghoon
    Hummel, Rolf E.
    Journal of Applied Physics, 2006, 100 (04):
  • [50] Room-temperature photoluminescence of amorphous hydrogenated silicon carbide doped with erbium
    Terukov, E.I.
    Kudoyarova, V.Kh.
    Kuznetsov, A.N.
    Fuhs, W.
    Weiser, G.
    Kuehne, H.
    Journal of Non-Crystalline Solids, 227-230 (Pt A): : 488 - 492
12345