Features of photoluminescence of uniformly and selectively erbium doped silicon structures produced by the sublimation MBE method

被引：0
|
作者：
Andreev, BA [1 ]
Bresler, MS
Gusev, OB
Krasil'nik, ZF
Kuznetsov, VP
Soldatkin, AO
Yassievich, IN
机构：
[1] Russian Acad Sci, Inst Microstruct Phys, Nizhnii Novgorod, Russia
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA | 2001年 / 65卷 / 02期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：271 / 275
页数：5
相关论文
共 50 条
  • [21] The structure and photoluminescence of erbium-doped nanocrystalline silicon thin films produced by reactive magnetron sputtering
    Cerqueira, MF
    Losurdo, M
    Stepikhova, MV
    Conde, O
    Giangregorio, MM
    Pinto, P
    Ferreira, JA
    GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2002, 82-84 : 637 - 643
  • [22] Growth conditions of erbium-oxygen-doped silicon grown by MBE
    Stimmer, J
    Reittinger, A
    Abstreiter, G
    Holzbrecher, H
    Buchal, C
    RARE EARTH DOPED SEMICONDUCTORS II, 1996, 422 : 15 - 20
  • [23] Effect of growth conditions on photoluminescence of erbium-doped silicon layers grown using sublimation molecular-beam epitaxy
    V. G. Shengurov
    S. P. Svetlov
    V. Yu. Chalkov
    B. A. Andreev
    Z. F. Krasil’nik
    D. I. Kryzhkov
    Physics of the Solid State, 2004, 46 : 101 - 103
  • [24] Effect of growth conditions on photoluminescence of erbium-doped silicon layers grown using sublimation molecular-beam epitaxy
    Shengurov, VG
    Svetlov, SP
    Chalkov, VY
    Andreev, BA
    Krasil'nik, ZF
    Kryzhkov, DI
    PHYSICS OF THE SOLID STATE, 2004, 46 (01) : 101 - 103
  • [25] Photoluminescence excitation and deexcitation mechanism of erbium doped silicon monoxide
    The University, Southampton, United Kingdom
    Electron Lett, 6 (589-591):
  • [26] Mechanism on energy transfer of photoluminescence exciton in erbium doped silicon
    Lei, Hongbing
    Yang, Qinqing
    Ou, Haiyan
    Yu, Jinzhong
    Wang, Qiming
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2000, 21 (03): : 232 - 238
  • [27] Photoluminescence of erbium in amorphous hydrogenated phosphorus-doped silicon
    E. I. Terukov
    A. N. Kuznetsov
    E. O. Parshin
    G. Weiser
    H. Kuehne
    Semiconductors, 1997, 31 : 738 - 739
  • [28] Photoluminescence in erbium doped amorphous silicon oxycarbide thin films
    Gallis, S
    Huang, MB
    Efstathiadis, H
    Eisenbraun, E
    Kaloyeros, AE
    Nyein, EE
    Hommerich, U
    APPLIED PHYSICS LETTERS, 2005, 87 (09)
  • [29] Photoluminescence of erbium-doped silicon: Excitation power dependence
    C. A. J. Ammerlaan
    D. T. X. Thao
    T. Gregorkiewicz
    N. A. Sobolev
    Semiconductors, 1999, 33 : 598 - 602
  • [30] Photoluminescence of erbium-doped silicon: excitation power dependence
    Ammerlaan, CAJ
    Thao, DTX
    Gregorkiewicz, T
    Sobolev, NA
    SEMICONDUCTORS, 1999, 33 (06) : 598 - 602
12345