Growth conditions of erbium-oxygen-doped silicon grown by MBE

被引：5
|
作者：
Stimmer, J [1 ]
Reittinger, A [1 ]
Abstreiter, G [1 ]
Holzbrecher, H [1 ]
Buchal, C [1 ]
机构：
[1] TECH UNIV MUNICH,WALTER SCHOTTKY INST,D-85748 GARCHING,GERMANY
来源：
RARE EARTH DOPED SEMICONDUCTORS II | 1996年 / 422卷
关键词：
D O I：
10.1557/PROC-422-15
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：15 / 20
页数：6
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