Growth conditions of erbium-oxygen-doped silicon grown by MBE

被引：5
|
作者：
Stimmer, J [1 ]
Reittinger, A [1 ]
Abstreiter, G [1 ]
Holzbrecher, H [1 ]
Buchal, C [1 ]
机构：
[1] TECH UNIV MUNICH,WALTER SCHOTTKY INST,D-85748 GARCHING,GERMANY
来源：
RARE EARTH DOPED SEMICONDUCTORS II | 1996年 / 422卷
关键词：
D O I：
10.1557/PROC-422-15
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：15 / 20
页数：6
相关论文
共 50 条
  • [41] SILICON MIGRATION DURING MBE GROWTH OF DOPED (AL,GA)AS FILMS
    GONZALEZ, L
    CLEGG, JB
    HILTON, D
    GOWERS, JP
    FOXON, CT
    JOYCE, BA
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 41 (03): : 237 - 241
  • [42] THE ELECTRICAL-PROPERTIES OF DOPED SILICON, GROWN BY MOLECULAR-BEAM-EPITAXY (MBE)
    KUBIAK, RAA
    NEWSTEAD, SM
    LEONG, WY
    HOUGHTON, R
    PARKER, EHC
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 42 (03): : 197 - 200
  • [43] ELECTRICAL AND OPTICAL-PROPERTIES OF SILICON DOPED INP GROWN BY GAS SOURCE MBE
    MORISHITA, Y
    IMAIZUMI, M
    GOTODA, M
    MARUNO, S
    NOMURA, Y
    OGATA, H
    JOURNAL OF CRYSTAL GROWTH, 1990, 104 (02) : 457 - 462
  • [44] Silicon-based rare earth-doped materials and devices grown by MBE
    Chow, P
    Dong, JW
    Zaytsev, S
    Osinsky, A
    Hertog, B
    2004 IST IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, 2004, : 186 - 188
  • [45] Study of the oxygen role in the photoluminescence of erbium doped nanocrystalline silicon embedded in a silicon amorphous matrix
    Cerqueira, M. F.
    Losurdo, M.
    Monteiro, T.
    Stepikhova, M.
    Soares, M. J.
    Peres, M.
    Alves, E.
    Conde, O.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) : 1148 - 1151
  • [46] Doped silicon epitaxial layers by MBE
    Datta, P
    Prakash, A
    Kumar, P
    Gupta, SK
    Kesavan, R
    SEMICONDUCTOR DEVICES, 1996, 2733 : 344 - 346
  • [47] RELATIONSHIP OF PROPERTIES OF MBE GROWN GAAS-LAYERS WITH GROWTH-CONDITIONS
    DUNG, PT
    LAZNICKA, M
    PAJASOVA, L
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1986, 36 (06) : 759 - +
  • [48] Oval defect classification in MBE-grown GaAs depending on growth conditions
    Inst of Electron Technology, Warszawa, Poland
    Electron Technol (Warsaw), 2-3 (147-150):
  • [49] INCORPORATION OF CARBON IN SILICON LAYERS GROWN BY MBE
    ROBBINS, DJ
    HARDEMAN, RW
    GASSON, DB
    PITT, AD
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : C355 - C355
  • [50] MBE grown Planar Doped Barrier Diodes
    Van Tuyen, V
    EPITAXIAL GROWTH-PRINCIPLES AND APPLICATIONS, 1999, 570 : 171 - 174
12345