Luminescent erbium-doped porous silicon bilayer structures

被引：0
|
作者：
Gu, LL
Xiong, ZH
Chen, G
Xiao, ZS
Gong, DW
Hou, XY
Wang, X [1 ]
机构：
[1] Fudan Univ, Surface Phys Lab, Shanghai 200433, Peoples R China
[2] Beijing Normal Univ, Inst Low Energy Nucl Phys, Beijing 100875, Peoples R China
来源：
ADVANCED MATERIALS | 2001年 / 13卷 / 18期
关键词：
D O I：
10.1002/1521-4095(200109)13:18<1402::AID-ADMA1402>3.0.CO;2-U
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A novel method for preparing luminescent erbium-doped porous silicon (PSi) is presented. By anodic etching of an Er and O co-doped Si single crystalline film grown by molecular beam epitaxy, an Er-doped PSi/PSi bilayer structure is formed. The advantages of such a bilayer structure are efficienct excitation of Er ions and suppression of energy back transfer for the de-excitation process.
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收藏
页码：1402 / 1405
页数：4
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