Luminescent erbium-doped porous silicon bilayer structures

被引：0

作者：

Gu, LL

Xiong, ZH

Chen, G

Xiao, ZS

Gong, DW

Hou, XY

Wang, X ^{[1
]}

机构：

[1] Fudan Univ, Surface Phys Lab, Shanghai 200433, Peoples R China

[2] Beijing Normal Univ, Inst Low Energy Nucl Phys, Beijing 100875, Peoples R China

来源：

ADVANCED MATERIALS | 2001年 / 13卷 / 18期

关键词：

D O I：

10.1002/1521-4095(200109)13:18<1402::AID-ADMA1402>3.0.CO;2-U

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A novel method for preparing luminescent erbium-doped porous silicon (PSi) is presented. By anodic etching of an Er and O co-doped Si single crystalline film grown by molecular beam epitaxy, an Er-doped PSi/PSi bilayer structure is formed. The advantages of such a bilayer structure are efficienct excitation of Er ions and suppression of energy back transfer for the de-excitation process.

引用

页码：1402 / 1405

页数：4

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