Infrared photoluminescence from erbium-doped spark-processed silicon
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作者:
Kim, Kwanghoon
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Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
Kim, Kwanghoon
[1
]
Hummel, Rolf E.
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Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
Hummel, Rolf E.
[1
]
机构:
[1] Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
机构:
Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
Lei, HB
Yang, QQ
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Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
Yang, QQ
Ou, HY
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Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
Ou, HY
Wang, QM
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Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
Wang, QM
INTEGRATED OPTOELECTRONICS II,
1998,
3551
: 53
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58