Infrared photoluminescence from erbium-doped spark-processed silicon

被引:0
|
作者
Kim, Kwanghoon [1 ]
Hummel, Rolf E. [1 ]
机构
[1] Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
来源
Journal of Applied Physics | 2006年 / 100卷 / 04期
关键词
40;
D O I
暂无
中图分类号
学科分类号
摘要
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [31] STRONG ROOM-TEMPERATURE PHOTOLUMINESCENCE FROM ERBIUM-DOPED SILICON MONOXIDE
    ROBERTS, SW
    PARKER, GJ
    ELECTRONICS LETTERS, 1995, 31 (17) : 1499 - 1500
  • [32] Photoluminescence at 1540 nm from erbium-doped amorphous silicon carbide films
    Gallis, S
    Efstathiadis, H
    Huang, MB
    Nyein, EE
    Hommerich, U
    Kaloyeros, AE
    JOURNAL OF MATERIALS RESEARCH, 2004, 19 (08) : 2389 - 2393
  • [33] A novel approach of photoluminescence from erbium-doped silicon-based materials
    Xiao, ZS
    Xu, F
    Zhang, TH
    Cheng, GA
    Gu, LL
    ACTA PHYSICA SINICA, 2001, 50 (01) : 164 - 168
  • [34] Photoluminescence and protoacoustic effect of erbium-doped porous silicon nanostructure
    Sekak, K. A.
    Abdullah, S.
    Paiman, S.
    Yunus, W. A.
    INTERNATIONAL JOURNAL OF NANOSCIENCE, VOL 5, NOS 4 AND 5, 2006, 5 (4-5): : 599 - +
  • [35] Photoluminescence at 1540 nm from erbium-doped amorphous silicon carbide films
    Spyros Gallis
    Harry Efstathiadis
    Mengbing Huang
    Ei Ei Nyein
    Uwe Hommerich
    Alain E. Kaloyeros
    Journal of Materials Research, 2004, 19 : 2389 - 2393
  • [36] Strong modification of photoluminescence in erbium-doped porous silicon microcavities
    Zhou, Y
    Snow, PA
    Russell, PSJ
    APPLIED PHYSICS LETTERS, 2000, 77 (16) : 2440 - 2442
  • [37] Electroluminescence and magnetic field quenching of photoluminescence of spark-processed Si
    Hummel, R.E.
    Stora, M.E.
    Shepherd, N.
    Yu, S.
    Fajardo, F.
    Journal of Porous Materials, 2000, 7 (01) : 131 - 134
  • [38] Photoluminescence of erbium-doped silicon: Excitation power and temperature dependence
    Thao, D.T.X.
    Ammerlaan, C.A.J.
    Gregorkiewicz, T.
    1600, American Inst of Physics, Woodbury, NY, USA (88):
  • [39] Photoluminescence of erbium-doped silicon: Excitation power and temperature dependence
    Thao, DTX
    Ammerlaan, CAJ
    Gregorkiewicz, T
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (03) : 1443 - 1455
  • [40] COMPARISON OF ANODICALLY ETCHED POROUS SILICON WITH SPARK-PROCESSED SILICON
    HUMMEL, RE
    LUDWIG, M
    CHANG, SS
    LATORRE, G
    THIN SOLID FILMS, 1995, 255 (1-2) : 219 - 223