Carrier transport in InxGa1-xN thin films grown by modified activated reactive evaporation

被引：12

作者：

Meher, S. R. ^{[1
]}

Naidu, R. V. Muniswami ^{[1
]}

Biju, Kuyyadi P. ^{[1
]}

Subrahmanyam, A. ^{[1
]}

Jain, Mahaveer K. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys, Madras 600036, Tamil Nadu, India

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 08期

关键词：

METAL-INSULATOR-TRANSITION; ELECTRON-TRANSPORT; CONDUCTIVITY; INN;

D O I：

10.1063/1.3630000

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In the present work, we report the temperature dependent carrier transport properties of InxGa1-xN thin films in the entire composition range grown by modified activated reactive evaporation. The carrier transport in these degenerate semiconductors is controlled by impurity band conduction. A transition from metallic to semiconducting type resistivity was observed for indium rich films. The semiconducting behavior originates from electron-electron interaction and weak localization, whereas higher temperature scattering contributes to the metallic type resistivity. A transition of resistivity behavior from the quantum phenomena to the classical Arrhenius approach was observed for x = 0.12 film. (C) 2011 American Institute of Physics. [doi:10.1063/1.3630000]

引用

页数：3

共 50 条

[41] Carrier dynamics of InxGa1-xN quantum disks embedded in GaN nanocolumns
Holmes, Mark J.
Park, Young S.
Wang, Xu
Chan, Christopher C. S.
Jarjour, Anas F.
Taylor, Robert A.
Warner, Jamie H.
Luo, Jun
El-Ella, H. A. R.
Oliver, R. A.
JOURNAL OF APPLIED PHYSICS, 2011, 109 (06)
[42] GOOD OPTICAL QUALITY InxGa1-xN THIN FILMS GROWN ON Si(111) BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY
Ramizy, A.
Hammed, M. G.
Al-Jumaili, M. H.
Hasssan, Z.
JOURNAL OF NON-OXIDE GLASSES, 2018, 10 (02): : 43 - 48
[43] The source of holes in p-type InxGa1-xN films
Zvanut, M. E.
Willoughby, W. R.
Koleske, D. D.
GALLIUM NITRIDE MATERIALS AND DEVICES VIII, 2013, 8625
[44] Carrier recombination dynamics in InxGa1-xN/GaN multiple quantum wells
Brosseau, Colin-N
Perrin, Mathieu
Silva, Carlos
Leonelli, Richard
PHYSICAL REVIEW B, 2010, 82 (08):
[45] Calculations of carrier localization in InxGa1-xN -: art. no. 245107
Wang, LW
PHYSICAL REVIEW B, 2001, 63 (24):
[46] Characteristics of InxGa1-xN/GaN grown by LPMOVPE with the variation of growth temperature
Korea Research Inst of Standards and, Science, Taejeon, Korea, Republic of
J Cryst Growth, 1-2 (6-10):
[47] Photoluminescence and gain of MBE grown cubic InxGa1-xN/GaN heterostructures
Frey, T
As, DJ
Schikora, D
Lischka, K
Holst, J
Hoffmann, A
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1999, 216 (01): : 259 - 263
[48] Characteristics of InxGa1-xN/GaN grown by LPMOVPE with the variation of growth temperature
Lee, CR
Son, SJ
Lee, IH
Leem, JY
Noh, SK
JOURNAL OF CRYSTAL GROWTH, 1997, 182 (1-2) : 6 - 10
[49] Comparison of InxGa1-xN/GaN MQWs grown on GaN and sapphire substrates
Kim, T. S.
Park, J. Y.
Cuong, T. V.
Hong, C. -H.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006, 49 (05) : 2001 - 2005
[50] Optical properties of thin films and quantum wells of InxGa1-xN/GaN and their dependence on laser irradiation
Bazhenov, AV
Gorbunov, AV
Negrii, VD
Müller, J
Lipinski, M
Forchel, A
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (10) : 921 - 927

← 1 2 3 4 5 →