GOOD OPTICAL QUALITY InxGa1-xN THIN FILMS GROWN ON Si(111) BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY

InxGa1-xN/GaN/AlN heterostructure epitaxial layer on silicon utilizing plasma-assisted molecular beam epitaxy (PA-MBE) sample. X-ray diffraction (XRD) estimations uncover that the InGaN thin film was epitaxially developed on silicon substrates. high In-fraction of InGaN sample with an estimation of 0.30 has been acquired. Scanning electron microscopy (SEM) show, many depressions, V-shapes, and breaks were detectable on that surface; this may most presumably be because of moderately low sidelong development rate of the InGaN films. We trust that this imperfection in our sample might be used to upgrade the etching mechanism if these specimens utilized as porous layer, which realized that the vast majority of this deformity is metal and may prompt to make a new charging carrier density resulting in increasing the electron-hole pairs which create extraordinary plasmon resonance in the surface during the etching procedure then accelerate the etching rate and may reduce the defect inside the surface. Micro-photoluminescence (PL) spectra showed sharp and extreme crests at 364 nm with the generally low yellow emanation band, demonstrating great optical quality.