Pre-nitridation induced In incorporation in InxGa1-xN nanorods on Si(111) grown by molecular beam epitaxy

被引:8
|
作者
De, Arpan [1 ]
Tangi, Malleswararao [1 ]
Shivaprasad, S. M. [1 ]
机构
[1] Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India
关键词
MOVPE GROWTH; TEMPERATURE-DEPENDENCE; INGAN NANOWIRES; INN; SUBSTRATE; SURFACE; ALLOYS; RANGE; MBE;
D O I
10.1063/1.4926413
中图分类号
O59 [应用物理学];
学科分类号
摘要
We address the issue of obtaining high quality green emitting InGaN nanorods without any phase separation. Role of pre-nitridation of the Si(111) substrate and growth, temperature on the morphology, structural and optical properties of InxGa1-xN films grown by plasma assisted molecular beam epitaxy, has been studied. The nitrogen rich growth environment and surface nitridation results in the formation of vertically well-aligned single crystalline nanorods that are coalesced and isolated at 400 degrees C and 500 degrees C, respectively. In incorporation is also seen to be enhanced to approximate to 28% at 400 degrees C to yield a stable green emission, while the nanorods grown at 500 degrees C show blue band-edge emission. The orientation, phase separations, and optical properties characterized by Reflection High Energy Electron Diffraction, Field Emission Scanning Electron Microscopy, high resolution x-ray diffraction, x-ray photoelectron spectroscopy, and photoluminescence are corroborated to understand the underlying mechanism. The study optimizes conditions to grow high quality catalyst-free well-aligned InGaN rods on nitrided Si surface, whose band-edge emission can be tuned from blue to green by sheer control of the substrate temperature. (c) 2015 AIP Publishing LLC.
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页数:6
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