Indium-Incorporation with InxGa1-xN Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy

被引：4

作者：

Tsai, ChengDa ^{[1
]}

Lo, Ikai ^{[1
]}

Wang, YingChieh ^{[1
]}

Yang, ChenChi ^{[1
]}

Yang, HongYi ^{[1
]}

Shih, HueiJyun ^{[1
]}

Huang, HuiChun ^{[1
]}

Chou, Mitch M. C. ^{[1
]}

Huang, Louie ^{[2
]}

Tseng, Binson ^{[2
]}

机构：

[1] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Dept Phys, Dept Mat & Optoelect Sci, Kaohsiung 80424, Taiwan

[2] Adv Semicond Engn Inc, Kaohsiung 811, Taiwan

来源：

CRYSTALS | 2019年 / 9卷 / 06期

关键词：

plasma-assisted molecular beam epitaxy; InGaN; GaN-microdisks; TECHNOLOGY;

D O I：

10.3390/cryst9060308

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Indium-incorporation with InxGa1-xN layers on GaN-microdisks has been systematically studied against growth parameters by plasma-assisted molecular beam epitaxy. The indium content (x) of InxGa1-xN layer increased to 44.2% with an In/(In + Ga) flux ratio of up to 0.6 for a growth temperature of 620 degrees C, and quickly dropped with a flux ratio of 0.8. At a fixed In/(In + Ga) flux ratio of 0.6, we found that the indium content decreased as the growth temperature increased from 600 degrees C to 720 degrees C and dropped to zero at 780 degrees C. By adjusting the growth parameters, we demonstrated an appropriate InxGa1-xN layer as a buffer to grow high-indium-content InxGa1-xN/GaN microdisk quantum wells for micro-LED applications.

引用

页数：10

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