Indium-Incorporation with InxGa1-xN Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy

被引：4

作者：

Tsai, ChengDa ^{[1
]}

Lo, Ikai ^{[1
]}

Wang, YingChieh ^{[1
]}

Yang, ChenChi ^{[1
]}

Yang, HongYi ^{[1
]}

Shih, HueiJyun ^{[1
]}

Huang, HuiChun ^{[1
]}

Chou, Mitch M. C. ^{[1
]}

Huang, Louie ^{[2
]}

Tseng, Binson ^{[2
]}

机构：

[1] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Dept Phys, Dept Mat & Optoelect Sci, Kaohsiung 80424, Taiwan

[2] Adv Semicond Engn Inc, Kaohsiung 811, Taiwan

来源：

CRYSTALS | 2019年 / 9卷 / 06期

关键词：

plasma-assisted molecular beam epitaxy; InGaN; GaN-microdisks; TECHNOLOGY;

D O I：

10.3390/cryst9060308

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Indium-incorporation with InxGa1-xN layers on GaN-microdisks has been systematically studied against growth parameters by plasma-assisted molecular beam epitaxy. The indium content (x) of InxGa1-xN layer increased to 44.2% with an In/(In + Ga) flux ratio of up to 0.6 for a growth temperature of 620 degrees C, and quickly dropped with a flux ratio of 0.8. At a fixed In/(In + Ga) flux ratio of 0.6, we found that the indium content decreased as the growth temperature increased from 600 degrees C to 720 degrees C and dropped to zero at 780 degrees C. By adjusting the growth parameters, we demonstrated an appropriate InxGa1-xN layer as a buffer to grow high-indium-content InxGa1-xN/GaN microdisk quantum wells for micro-LED applications.

引用

页数：10

共 50 条

[41] Time-delayed indium incorporation in ultrathin (InxGa1-xN/GaN) multiple quantum wells grown by metalorganic vapor phase epitaxy
Schulze, F
Bläsing, J
Dadgar, A
Krost, A
[J]. APPLIED PHYSICS LETTERS, 2003, 82 (25) : 4558 - 4560
[42] Domain structure in chemically ordered InxGa1-xN alloys grown by molecular beam epitaxy
Doppalapudi, D
Basu, SN
Moustakas, TD
[J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (02) : 883 - 886
[43] Full-composition-graded InxGa1-xN films grown by molecular beam epitaxy
Zheng, X. T.
Wang, T.
Wang, P.
Sun, X. X.
Wang, D.
Chen, Z. Y.
Quach, P.
Wang, Y. X.
Yang, X. L.
Xu, F. J.
Qin, Z. X.
Yu, T. J.
Ge, W. K.
Shen, B.
Wang, X. Q.
[J]. APPLIED PHYSICS LETTERS, 2020, 117 (18)
[44] Plasma-assisted molecular beam epitaxy growth of GaN nanowires using indium-enhanced diffusion
Landre, O.
Songmuang, R.
Renard, J.
Bellet-Amalric, E.
Renevier, H.
Daudin, B.
[J]. APPLIED PHYSICS LETTERS, 2008, 93 (18)
[45] Modelling of indium rich clusters in MOCVD InxGA1-xN/GaN multilayers
Jurczak, G
Maciejewski, G
Kret, S
Dluzewski, P
Ruterana, P
[J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2004, 382 (1-2) : 10 - 16
[46] Features of the spatial distribution of indium in InGaN epitaxial layers grown by plasma-assisted molecular beam epitaxy
Jmerik, V. N.
Mizerov, A. M.
Shubina, T. V.
Plotnikov, D. S.
Zamoryanskaya, M. V.
Yagovkina, M. A.
Domracheva, Ya. V.
Sitnikova, A. A.
Ivanov, S. V.
[J]. SEMICONDUCTORS, 2008, 42 (05) : 616 - 623
[47] Features of the spatial distribution of indium in InGaN epitaxial layers grown by plasma-assisted molecular beam epitaxy
V. N. Jmerik
A. M. Mizerov
T. V. Shubina
D. S. Plotnikov
M. V. Zamoryanskaya
M. A. Yagovkina
Ya. V. Domracheva
A. A. Sitnikova
S. V. Ivanov
[J]. Semiconductors, 2008, 42 : 616 - 623
[48] Luminescence studies in InxGa1-xN epitaxial layers with different indium contents
Wu, T. Y.
Chang, C. C.
Tiong, K. K.
Lee, Y. C.
Hu, S. Y.
Lin, L. Y.
Lin, T. Y.
Feng, Z. C.
[J]. OPTICAL MATERIALS, 2013, 35 (10) : 1829 - 1833
[49] Characterization of GaN microstructures grown by plasma-assisted molecular beam epitaxy
Lo, Ikai
Pang, Wen-Yuan
Chen, Wen-Yen
Hsu, Yu-Chi
Hsieh, Chia-Ho
Shih, Cheng-Hung
Chou, Mitch M. C.
Hsu, Tzu-Min
Hsu, Gary Z. L.
[J]. AIP ADVANCES, 2013, 3 (06):
[50] Porosity Control for Plasma-Assisted Molecular Beam Epitaxy of GaN Nanowires
Gomez, Victor J.
Santos, Antonio J.
Blanco, Eduardo
Lacroix, Bertrand
Garcia, Rafael
Huffaker, Diana L.
Morales, Francisco M.
[J]. CRYSTAL GROWTH & DESIGN, 2019, 19 (04) : 2461 - 2469

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