Carrier transport in InxGa1-xN thin films grown by modified activated reactive evaporation

被引：12

作者：

Meher, S. R. ^{[1
]}

Naidu, R. V. Muniswami ^{[1
]}

Biju, Kuyyadi P. ^{[1
]}

Subrahmanyam, A. ^{[1
]}

Jain, Mahaveer K. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys, Madras 600036, Tamil Nadu, India

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 08期

关键词：

METAL-INSULATOR-TRANSITION; ELECTRON-TRANSPORT; CONDUCTIVITY; INN;

D O I：

10.1063/1.3630000

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In the present work, we report the temperature dependent carrier transport properties of InxGa1-xN thin films in the entire composition range grown by modified activated reactive evaporation. The carrier transport in these degenerate semiconductors is controlled by impurity band conduction. A transition from metallic to semiconducting type resistivity was observed for indium rich films. The semiconducting behavior originates from electron-electron interaction and weak localization, whereas higher temperature scattering contributes to the metallic type resistivity. A transition of resistivity behavior from the quantum phenomena to the classical Arrhenius approach was observed for x = 0.12 film. (C) 2011 American Institute of Physics. [doi:10.1063/1.3630000]

引用

页数：3

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