Characterization of line-edge roughness in resist patterns and estimation of its effect on device performance

被引：70
|
作者：
Yamaguchi, A [1 ]
Tsuchiya, R [1 ]
Fukuda, H [1 ]
Komuro, O [1 ]
Kawada, H [1 ]
Iizumi, T [1 ]
机构：
[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan
来源：
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVII, PTS 1 AND 2 | 2003年 / 5038卷
关键词：
line edge roughness; CD-SEM; measurement parameter; device performance;
D O I：
10.1117/12.483519
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A guideline for evaluating LER and total procedure to estimate effects of measured LER on device performance were proposed. Spatial-frequency distributions of LER in various resist materials were investigated and general characteristics of spatial-frequency distribution of LER were obtained. Measurement parameters for accurate LER measurement can be calculated according to the guideline. Measured line-width distribution was used to predicting degradation and variation in MOS transistor performance using the two-dimensional device simulation. Effect of long-period component of LER was clarified as well as short-period component.
引用
收藏
页码：689 / 698
页数：10
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