Line-edge roughness: Characterization and material origin

被引：40
|
作者：
Yamaguchi, T [1 ]
Yamazaki, K [1 ]
Nagase, M [1 ]
Namatsu, H [1 ]
机构：
[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 6B期
关键词：
line-edge roughness; polymer aggregates; positive-tone resists; development; electron-beam lithography;
D O I：
10.1143/JJAP.42.3755
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Line-edge roughness (LER) is a serious problem that we encounter in nanolithography as pattern sizes shrink. Two critical issues concerning the LER of resist patterns are its characterization and its origin. In this study, characterization involved estimating the LER of 300-nm line-&-space patterns in ZEP520 resist of various thicknesses by three standard metrological methods: top-down scanning electron microscope (SEM) method, top-down atomic force microscope (AFM) method, and sidewall AFM method. In this paper, we review these methods and compare their results. Regarding the origin, sidewall AFM measurements revealed polymer aggregates naturally contained in resist films to be the origin of LER in chain-scission-type resists. How the aggregates contribute to LER during the development process was also clarified.
引用
收藏
页码：3755 / 3762
页数：8
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