Characterization of line-edge roughness in resist patterns and estimation of its effect on device performance

被引：70
|
作者：
Yamaguchi, A [1 ]
Tsuchiya, R [1 ]
Fukuda, H [1 ]
Komuro, O [1 ]
Kawada, H [1 ]
Iizumi, T [1 ]
机构：
[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan
来源：
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVII, PTS 1 AND 2 | 2003年 / 5038卷
关键词：
line edge roughness; CD-SEM; measurement parameter; device performance;
D O I：
10.1117/12.483519
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A guideline for evaluating LER and total procedure to estimate effects of measured LER on device performance were proposed. Spatial-frequency distributions of LER in various resist materials were investigated and general characteristics of spatial-frequency distribution of LER were obtained. Measurement parameters for accurate LER measurement can be calculated according to the guideline. Measured line-width distribution was used to predicting degradation and variation in MOS transistor performance using the two-dimensional device simulation. Effect of long-period component of LER was clarified as well as short-period component.
引用
收藏
页码：689 / 698
页数：10
相关论文
共 50 条
  • [11] Effect of resist on the transfer of line-edge roughness spatial metrics from mask to wafer
    Naulleau, Patrick P.
    Gallatin, Gregg M.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (06): : 1259 - 1266
  • [12] Controlling line-edge roughness in EUV resist with sturdy, small molecules
    不详
    [J]. SOLID STATE TECHNOLOGY, 2007, 50 (03) : 34 - 34
  • [13] Multitaper and multisegment spectral estimation of line-edge roughness
    Luo, Yao
    Savari, Serap A.
    [J]. JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2017, 16 (03):
  • [14] Molecular weight effect on line-edge roughness
    Yamaguchi, T
    Yamazaki, K
    Namatsu, H
    [J]. ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XX, PTS 1 AND 2, 2003, 5039 : 1212 - 1219
  • [15] Characterization and simulation of surface and line-edge roughness in photoresists
    Constandoudis, V
    Gogolides, E
    Patsis, GP
    Tserepi, A
    Valamontes, ES
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06): : 2694 - 2698
  • [16] Impact of line-edge roughness on FinFET matching performance
    Baravelli, Ernanuele
    Dixit, Abhisek
    Rooyackers, Rita
    Jurczak, Malgorzata
    Speciale, Nicolo
    De Meyer, Kristin
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (09) : 2466 - 2474
  • [17] Line-Edge Roughness performance targets for EUV Lithography
    Brunner, Timothy A.
    Chen, Xuemei
    Gabor, Allen
    Higgins, Craig
    Sun, Lei
    Mack, Chris A.
    [J]. EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY VIII, 2017, 10143
  • [18] Depth dependence of resist line-edge roughness: Relation to photoacid diffusion length
    Shin, J
    Ma, Y
    Cerrina, F
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (06): : 2927 - 2931
  • [19] Photo-resist line-edge roughness analysis using scaling concepts
    Constantoudis, V
    Patsis, GP
    Gogolides, E
    [J]. METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVII, PTS 1 AND 2, 2003, 5038 : 901 - 909
  • [20] Fourier analysis of line-edge roughness in calixarene fine patterns
    Ishida, M
    Fujita, J
    Ochiai, Y
    Yamamoto, H
    Touno, S
    [J]. MICROPROCESSES AND NANOTECHNOLOGY 2001, DIGEST OF PAPERS, 2001, : 276 - 277
12345