Carbon nanotube interconnects: A process solution

被引：19
|
作者：
Jun, L [1 ]
Ye, Q [1 ]
Cassell, A [1 ]
Koehne, J [1 ]
Ng, HT [1 ]
Han, J [1 ]
Meyyappan, M [1 ]
机构：
[1] NASA, Ames Res Ctr, Moffett Field, CA 94035 USA
来源：
PROCEEDINGS OF THE IEEE 2003 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2003年
关键词：
D O I：
10.1109/IITC.2003.1219773
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
The susceptibility of common interconnect metals to electromigration at current densities of 10(6) A/cm(2) or greater has been a concern. The ITRS Roadmap [1] emphasizes interconnect technology as a critical element and calls for innovative material and process solutions. This talk will present the potential of carbon nanotubes (CNTs) as interconnects and a processing scheme to integrate them in device fabrication.
引用
收藏
页码：271 / 272
页数：2
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