Electrostatic Capacitance Extraction for Carbon Nanotube Interconnects

被引：1
|
作者：
Parkash, Vidur [1 ]
Goel, Ashok K. [1 ]
机构：
[1] Michigan Technol Univ, Houghton, MI 49931 USA
来源：
2008 51ST MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1 AND 2 | 2008年
关键词：
D O I：
10.1109/MWSCAS.2008.4616929
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Carbon nanotubes are promising candidates for futuristic nanoelectronic applications due to their excellent properties. In this paper, we present a comprehensive modeling and calculation of electrostatic capacitances for various carbon nanotube systems that can be used to model interconnects in nanotechnology circuits. We provide results for single walled, multiwalled and bundles of single-walled carbon nanotubes as functions of the various design parameters. Numerical computations were performed using the method of moments in conjunction with a Green's function appropriate for the geometry of the interconnects.
引用
收藏
页码：834 / 837
页数：4
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