A model for carbon nanotube interconnects

被引：87
|
作者：
Xu, Y. [1 ]
Srivastava, A. [1 ]
机构：
[1] Louisiana State Univ, Dept Elect & Comp Engn, Baton Rouge, LA 70803 USA
来源：
INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS | 2010年 / 38卷 / 06期
关键词：
CNT interconnects; CNT transmission line; CNT interconnect modeling; RF/microwave modeling; LAYERED ELECTRON-GAS; SINGLE-WALL; PERFORMANCE ANALYSIS; ELECTRODYNAMICS; TRANSPORT; RESISTANCE; BUNDLES; DESIGN; IMPACT; SIGNAL;
D O I：
10.1002/cta.587
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a semi-classical one-dimensional (ID) electron fluid model is built that is based on a classical two-dimensional electron fluid theory taking into account electron electron repulsive forces, which are significant in ID system. We have used 1D fluid model to characterize the carbon nanotube (CNT) as interconnects, built a transmission line model and studied S-parameters and group delays. We have also compared S-parameters and group delays of CNT interconnects with the corresponding parameters of Cu interconnects. The results show that the CNT interconnects exhibit superior performance over the Cu interconnects. The results also suggest using CNT as interconnects for radio frequency (RF)/microwave applications. Copyright (C) 2009 John Wiley & Sons, Ltd.
引用
收藏
页码：559 / 575
页数：17
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