Carbon nanotube interconnects: A process solution

被引：19

作者：

Jun, L ^{[1
]}

Ye, Q ^{[1
]}

Cassell, A ^{[1
]}

Koehne, J ^{[1
]}

Ng, HT ^{[1
]}

Han, J ^{[1
]}

Meyyappan, M ^{[1
]}

机构：

[1] NASA, Ames Res Ctr, Moffett Field, CA 94035 USA

来源：

PROCEEDINGS OF THE IEEE 2003 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2003年

关键词：

D O I：

10.1109/IITC.2003.1219773

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The susceptibility of common interconnect metals to electromigration at current densities of 10(6) A/cm(2) or greater has been a concern. The ITRS Roadmap [1] emphasizes interconnect technology as a critical element and calls for innovative material and process solutions. This talk will present the potential of carbon nanotubes (CNTs) as interconnects and a processing scheme to integrate them in device fabrication.

引用

页码：271 / 272

页数：2

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