A 133 MHz Radiation-Hardened Delay-Locked Loop

被引:11
|
作者
Sengupta, Rajat [1 ,2 ]
Vermeire, Bert [2 ]
Clark, Lawrence T. [2 ]
Bakkaloglu, Bertan [2 ]
机构
[1] Intel Corp, Hillsboro, OR 97124 USA
[2] Arizona State Univ, Dept Elect Comp & Energy Engn, Tempe, AZ 85281 USA
关键词
Charge pump; delay-locked loop (DLL); jitter phase-locked loop (PLL); single-event transients (SETs);
D O I
10.1109/TNS.2010.2086485
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A radiation hardened by a design delay-locked loop (DLL) architecture for quadrature phase clock generation in a 133 MHz DDR memory designed on a foundry 0.13 mu m fabrication process is presented. The DLL employs an all-digital architecture, including a hardened digital integrator using error-correction logic. The area and power overhead due to the hardening are 32% and 37%, respectively. Simulation results demonstrate that the all-digital DLL is hardened against single-event transients with no timing impact due to hardening. Layout techniques to make the DLL hardened to multiple bit upsets are also presented.
引用
收藏
页码:3626 / 3633
页数:8
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