Growth of p-type ZnSe by metalorganic molecular beam epitaxy using metal Zn and dimethylselenide

被引：3
|
作者：
Suda, J
Tsuka, M
Honda, D
Funato, M
Kawakami, Y
Fujita, S
Fujita, S
机构：
[1] Dept. of Electron. Sci. and Eng., Kyoto University
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1996年 / 25卷 / 02期
关键词：
deep level transient spectroscopy (DLTS); dimethylselenide (DMSe); metalorganic molecular beam epitaxy (MOMBE); nitrogen doping; photoluminescence (PL); ZnSe;
D O I：
10.1007/BF02666248
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes metalorganic molecular beam epitaxy (MOMBE) of p-type ZnSe using metal zinc, pre-cracked metalorganic dimethylselenide, and microwave-excited nitrogen plasma as sources. Optical, structural, and electrical properties of the p-type ZnSe layers have been investigated. At present, maximum net acceptor concentration N-a-N-d is 3 x 10(17) cm(3) without any post-growth annealing. This is the highest acceptor concentration ever reported for MOMBE-grown p-type ZnSe doped with nitrogen plasma, but photoluminescence and deep level transient spectroscopy suggest that accepters are highly compensated and the reduction of compensating defects is a key to further increase the acceptor concentration.
引用
收藏
页码：223 / 227
页数：5
相关论文
共 50 条
  • [21] Se species in metalorganic molecular beam epitaxy of ZnSe
    Qiu, Y
    ElEmawy, AA
    Osinsky, A
    Littlefield, E
    Temkin, H
    APPLIED PHYSICS LETTERS, 1996, 68 (23) : 3311 - 3313
  • [22] n-type and p-type doping of GaSb and AlGaSb grown by metalorganic molecular beam epitaxy
    Yamamoto, K.
    Asahi, H.
    Inoue, K.
    Miki, K.
    Liu, X.F.
    Marx, D.
    Villaflor, A.B.
    Asami, K.
    Gonda, S.
    Journal of Crystal Growth, 1995, 150 (1 -4 pt 2): : 853 - 857
  • [23] Heavily carbon-doped P-type InGaAs grown by metalorganic molecular beam epitaxy
    Akatsuka, Takeshi, 1600, (30):
  • [24] P-TYPE CARBON-DOPED INGAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
    SHIRAKASHI, J
    YAMADA, T
    MING, Q
    NOZAKI, S
    TAKAHASHI, K
    TOKUMITSU, E
    KONAGAI, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (9B): : L1609 - L1611
  • [25] METALORGANIC VAPOR-PHASE EPITAXY OF P-TYPE ZNSE AND P/N JUNCTION DIODES
    FUJITA, S
    FUJITA, S
    JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) : 552 - 556
  • [26] Comparative study of ZnSe growth rate by metal organic molecular beam epitaxy using different Zn sources
    Kobayashi, Naoki
    Shinoda, Yukinobu
    Kobayashi, Yoshihiro
    1728, (27):
  • [27] METALORGANIC VAPOR-PHASE EPITAXY OF LOW-RESISTIVITY P-TYPE ZNSE
    YASUDA, T
    MITSUISHI, I
    KUKIMOTO, H
    APPLIED PHYSICS LETTERS, 1988, 52 (01) : 57 - 59
  • [28] Electrical characterization of hole traps in p-type ZnSe and ZnSSe grown by molecular beam epitaxy
    Seghier, D
    Hauksson, IS
    Gislason, HP
    Brownlie, GD
    Prior, KA
    Cavenett, BC
    APPLIED PHYSICS LETTERS, 1998, 72 (23) : 3026 - 3028
  • [29] P-type ZnSe-ZnTe stained layer superlattices grown by molecular beam epitaxy
    Xu, Liang
    Wang, Hailong
    Shen, Aidong
    Cui, Jie
    Chen, Yunliang
    Shen, Yuhua
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1993, 14 (08): : 505 - 508
  • [30] DEEP HOLE TRAP PROPERTIES OF P-TYPE ZNSE GROWN BY MOLECULAR-BEAM EPITAXY
    ANDO, K
    KAWAGUCHI, Y
    OHNO, T
    OHKI, A
    ZEMBUTSU, S
    APPLIED PHYSICS LETTERS, 1993, 63 (02) : 191 - 193
12345