Comparative study of ZnSe growth rate by metal organic molecular beam epitaxy using different Zn sources

被引:0
|
作者
Kobayashi, Naoki [1 ]
Shinoda, Yukinobu [1 ]
Kobayashi, Yoshihiro [1 ]
机构
[1] NTT, Japan
来源
| 1728年 / 27期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] COMPARATIVE-STUDY OF ZNSE GROWTH-RATE BY METAL ORGANIC MOLECULAR-BEAM EPITAXY USING DIFFERENT ZN SOURCES
    KOBAYASHI, N
    SHINODA, Y
    KOBAYASHI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (09): : L1728 - L1730
  • [2] Growth of p-type ZnSe by metalorganic molecular beam epitaxy using metal Zn and dimethylselenide
    Suda, J
    Tsuka, M
    Honda, D
    Funato, M
    Kawakami, Y
    Fujita, S
    Fujita, S
    JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (02) : 223 - 227
  • [3] Growth of ZnSe nanowires by molecular beam epitaxy
    Colli, A
    Martelli, F
    Rubini, S
    Ducati, C
    Hofmann, S
    Ferrari, AC
    Robertson, J
    Franciosi, A
    2004 4TH IEEE CONFERENCE ON NANOTECHNOLOGY, 2004, : 177 - 179
  • [4] Growth of ZnSe-(Zn,Mg)(S,Se) superlattices by molecular beam epitaxy
    Korn, M
    Albert, D
    Nürnberger, J
    Faschinger, W
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 448 - 452
  • [5] A COMPARATIVE-STUDY OF GROWTH OF ZNSE FILMS ON GAAS BY CONVENTIONAL MOLECULAR-BEAM EPITAXY AND MIGRATION ENHANCED EPITAXY
    LILJA, J
    KESKINEN, J
    HOVINEN, M
    PESSA, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 593 - 598
  • [6] Growth of MgO by metal-organic molecular beam epitaxy
    Niu, F
    Hoerman, BH
    Wessels, BW
    CHEMICAL PROCESSING OF DIELECTRICS, INSULATORS AND ELECTRONIC CERAMICS, 2000, 606 : 45 - 50
  • [7] GROWTH OF N-ZNSE AND P-ZNSE BY GAS-SOURCE MOLECULAR-BEAM EPITAXY USING METAL ZN AND H2SE
    IMAIZUMI, M
    ENDOH, Y
    OHTSUKA, K
    ISU, T
    JOURNAL OF CRYSTAL GROWTH, 1994, 136 (1-4) : 366 - 370
  • [8] Metalorganic molecular beam epitaxy growth of ZnSe with new Zn and Se precursors without precracking
    Sato, G.
    Numai, T.
    Hoshiyama, M.
    Suemune, I.
    Machida, H.
    Shimoyama, N.
    Journal of Crystal Growth, 1995, 150 (1 -4 pt 2): : 734 - 737
  • [9] MOLECULAR-BEAM EPITAXY GROWTH OF ZNSE USING A CRACKED SELENIUM SOURCE
    CHENG, H
    DEPUYDT, JM
    HAASE, MA
    POTTS, JE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02): : 181 - 186
  • [10] Study of the initial growth process of ZnSe on Si(111) by molecular beam epitaxy
    MendezGarcia, VH
    LopezLopez, M
    HernandezCalderon, I
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (9AB): : L1153 - L1156