Growth of p-type ZnSe by metalorganic molecular beam epitaxy using metal Zn and dimethylselenide

This paper describes metalorganic molecular beam epitaxy (MOMBE) of p-type ZnSe using metal zinc, pre-cracked metalorganic dimethylselenide, and microwave-excited nitrogen plasma as sources. Optical, structural, and electrical properties of the p-type ZnSe layers have been investigated. At present, maximum net acceptor concentration N-a-N-d is 3 x 10(17) cm(3) without any post-growth annealing. This is the highest acceptor concentration ever reported for MOMBE-grown p-type ZnSe doped with nitrogen plasma, but photoluminescence and deep level transient spectroscopy suggest that accepters are highly compensated and the reduction of compensating defects is a key to further increase the acceptor concentration.