A capacitive peaking of InGaP/GaAs HBT transimpedance amplifier

被引：6
|
作者：
Yang, SC [1 ]
Kuo, CW [1 ]
Chien, FT [1 ]
Chan, YJ [1 ]
机构：
[1] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan
来源：
2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2001年
关键词：
D O I：
10.1109/ICIPRM.2001.929093
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Integrated InGaP/GaAs HBT transimpedance amplifier (TZ) circuits were designed, fabricated and characterized. In this study, using a capacitive-peaking (C-peaking) technique to increase the bandwidth of transimpedance amplifier has been proposed. Based on the Butterworth-type approach, we can easily enhance the bandwidth of transimpedance amplifier by this C-peaking technique without sacrificing its low-frequency TZ gain. The low-frequency transimpedance gain of our designed amplifier is 51.4 dB Omega, and the measured 3 dB bandwidth of TZ amplifier is enhanced from 9 GHz to 11.8 GHz.
引用
收藏
页码：204 / 207
页数：4
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