A capacitive peaking of InGaP/GaAs HBT transimpedance amplifier

被引：6
|
作者：
Yang, SC [1 ]
Kuo, CW [1 ]
Chien, FT [1 ]
Chan, YJ [1 ]
机构：
[1] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan
来源：
2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2001年
关键词：
D O I：
10.1109/ICIPRM.2001.929093
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Integrated InGaP/GaAs HBT transimpedance amplifier (TZ) circuits were designed, fabricated and characterized. In this study, using a capacitive-peaking (C-peaking) technique to increase the bandwidth of transimpedance amplifier has been proposed. Based on the Butterworth-type approach, we can easily enhance the bandwidth of transimpedance amplifier by this C-peaking technique without sacrificing its low-frequency TZ gain. The low-frequency transimpedance gain of our designed amplifier is 51.4 dB Omega, and the measured 3 dB bandwidth of TZ amplifier is enhanced from 9 GHz to 11.8 GHz.
引用
收藏
页码：204 / 207
页数：4
相关论文
共 50 条
  • [31] A high-linearity InGaP/GaAs HBT power amplifier for IEEE 802.11a/n
    崔杰
    陈磊
    康春雷
    史佳
    张旭光
    艾宝丽
    刘轶
    [J]. Journal of Semiconductors, 2013, 34 (06) - 96
  • [32] A Highly Linear Two-Stage Amplifier Integrated Circuit Using InGaP/GaAs HBT
    Choi, Kyunggon
    Kim, Minsu
    Kim, Hyungchul
    Jung, Sungchan
    Cho, Jaeyong
    Yoo, Sungchul
    Kim, Yong Hwan
    Yoo, Hyungmo
    Yang, Youngoo
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2010, 45 (10) : 2038 - 2043
  • [33] π-PEAKING SHUNT-FEEDBACK TRANSIMPEDANCE AMPLIFIER WITH BANDWIDTH ENHANCEMENT
    Sinsoontornpong, Panus
    Worapishet, Apisak
    [J]. JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS, 2013, 22 (09)
  • [34] π-peaking Shunt-Feedback Transimpedance Amplifier with Bandwidth Enhancement
    Sinsoontornpong, Panus
    Worapishet, Apisak
    [J]. 2012 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID STATE CIRCUIT (EDSSC), 2012,
  • [35] PdGe on GaAs: A study of the applicability in InGaP/GaAs HBT fabrication
    Ahmari, DA
    Hattendorf, ML
    Lemmerhirt, DF
    Yang, Q
    Hartmann, QJ
    Stillman, GE
    [J]. COMPOUND SEMICONDUCTORS 1997, 1998, 156 : 467 - 470
  • [36] Cryogenic transimpedance amplifier for micromechanical capacitive sensors
    Antonio, D.
    Pastoriza, H.
    Julian, P.
    Mandoles, P.
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 2008, 79 (08):
  • [37] PdGe on GaAs: A study of the applicability in InGaP/GaAs HBT fabrication
    Ahmari, DA
    Hattendorf, ML
    Lemmerhirt, DF
    Yang, Q
    Hartmann, QJ
    Stillman, GE
    [J]. 1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 1998, : 467 - 470
  • [38] 倒置的InGaP/GaAs HBT与常规的InGaP/GaAs HBT器件性能比较分析
    顾磊
    熊德平
    周守利
    彭银生
    [J]. 集成电路应用, 2016, 33 (11) : 25 - 27
  • [39] InGaP/GaAs HBT DC-20 GHz distributed amplifier with compact ESD protection circuits
    Ma, YT
    Li, GP
    [J]. JOURNAL OF ELECTROSTATICS, 2006, 64 (02) : 88 - 95
  • [40] AN INGAP/GAAS HBT POWER AMPLIFIER FOR 4.9-5.9 GHz WIRELESS-LAN APPLICATIONS
    Huang, Liang
    Zhang, Zhihao
    Li, Sizhen
    Zhang, Gary
    [J]. 2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2014,
12345