PdGe on GaAs: A study of the applicability in InGaP/GaAs HBT fabrication

被引：0
|
作者：
Ahmari, DA [1 ]
Hattendorf, ML [1 ]
Lemmerhirt, DF [1 ]
Yang, Q [1 ]
Hartmann, QJ [1 ]
Stillman, GE [1 ]
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Microelect Lab, Urbana, IL 61801 USA
来源：
1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS | 1998年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Recently InGaP/GaAs HBTs have demonstrated performance comparable to AlGaAs/GaAs and have proven to be well suited for high-speed and low-noise applications [1-3]. Despite the excellent performance of InGaP/GaAs HBTs, continued efforts towards reducing the delay associated with the emitter resistance and capacitance are required. To help minimize the emitter resistance, PdGe contacts on n-type GaAs were studied. This experiment studies the behavior of the PdGe alloyed on a hot plate for times less than 30 minutes and compares results to RTA alloys. Also studied is the behavior of the PdGe contacts alloyed in various ambients. Finally, the issues associated with performing a self-aligned emitter etch with PdGe contacts are also discussed.
引用
收藏
页码：467 / 470
页数：4
相关论文
共 50 条
  • [1] PdGe on GaAs: A study of the applicability in InGaP/GaAs HBT fabrication
    Ahmari, DA
    Hattendorf, ML
    Lemmerhirt, DF
    Yang, Q
    Hartmann, QJ
    Stillman, GE
    COMPOUND SEMICONDUCTORS 1997, 1998, 156 : 467 - 470
  • [2] VBIC model applicability and extraction procedure for InGaP/GaAs HBT
    Cherepko, SV
    Hwang, JCM
    APMC 2001: ASIA-PACIFIC MICROWAVE CONFERENCE, VOLS 1-3, PROCEEDINGS, 2001, : 716 - 721
  • [3] GaAs/InGaP HBT devices and circuits
    Davies, I
    Davies, RA
    Marsh, SP
    Peniket, NA
    Wadsworth, SD
    Wallis, RH
    EDMO - 1997 WORKSHOP ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, 1997, : 33 - 38
  • [4] High reliability InGaP/GaAs HBT
    Pan, N
    Elliott, J
    Knowles, M
    Vu, DP
    Kishimoto, K
    Twynam, JK
    Sato, H
    Fresina, MT
    Stillman, GE
    IEEE ELECTRON DEVICE LETTERS, 1998, 19 (04) : 115 - 117
  • [5] InGaP/GaAs HBT with novel layer structure for emitter ledge fabrication
    Fresina, MT
    Hartmann, QJ
    Thomas, S
    Ahmari, DA
    Caruth, D
    Feng, M
    Stillman, GE
    IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, : 207 - 210
  • [6] 倒置的InGaP/GaAs HBT与常规的InGaP/GaAs HBT器件性能比较分析
    顾磊
    熊德平
    周守利
    彭银生
    集成电路应用, 2016, 33 (11) : 25 - 27
  • [7] Monolithic integration of a ZnS MSM photodiode and an InGaP/GaAs HBT on a GaAs substrate
    Chen, M. Y.
    Chang, C. C.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (04)
  • [8] Reliability study of InGaP/GaAs HBT for 28V operation
    Chau, Frank Hin-Fai
    Lin, Barry Jia-Fu
    Chen, Yan
    Kretschmar, Mark
    Lee, Chien-Ping
    Wang, Nan-lei Larry
    Sun, Xiaopeng
    Ma, Wenlong
    Xu, Sarah
    Hu, Peter
    IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM - 2006 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2006, 2006, : 191 - 194
  • [9] A capacitive peaking of InGaP/GaAs HBT transimpedance amplifier
    Yang, SC
    Kuo, CW
    Chien, FT
    Chan, YJ
    2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2001, : 204 - 207
  • [10] Influence of collector design on InGaP/GaAs HBT linearity
    Iwamoto, Masaya, 2000, IEEE, Piscataway, NJ, United States (02):
12345