A capacitive peaking of InGaP/GaAs HBT transimpedance amplifier

被引：6
|
作者：
Yang, SC [1 ]
Kuo, CW [1 ]
Chien, FT [1 ]
Chan, YJ [1 ]
机构：
[1] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan
来源：
2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2001年
关键词：
D O I：
10.1109/ICIPRM.2001.929093
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Integrated InGaP/GaAs HBT transimpedance amplifier (TZ) circuits were designed, fabricated and characterized. In this study, using a capacitive-peaking (C-peaking) technique to increase the bandwidth of transimpedance amplifier has been proposed. Based on the Butterworth-type approach, we can easily enhance the bandwidth of transimpedance amplifier by this C-peaking technique without sacrificing its low-frequency TZ gain. The low-frequency transimpedance gain of our designed amplifier is 51.4 dB Omega, and the measured 3 dB bandwidth of TZ amplifier is enhanced from 9 GHz to 11.8 GHz.
引用
收藏
页码：204 / 207
页数：4
相关论文
共 50 条
  • [41] InGaP/GaAs HBT DC-20 GHz distributed amplifier with compact ESD protection circuits
    Ma, YT
    Li, GP
    JOURNAL OF ELECTROSTATICS, 2006, 64 (02) : 88 - 95
  • [42] Single-chip dual-band WLAN power amplifier using InGaP/GaAs HBT
    Lin, Chien-Cheng
    Hsu, Yu-Cheng
    GAAS 2005: 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, Conference Proceedings, 2005, : 489 - 492
  • [43] A 2 um InGaP/GaAs HBT matrix Amplifier with 15 dB gain and 41 GHz bandwidth
    Chatchaikarn, A
    Gao, H
    Li, GP
    Chen, YC
    Yang, D
    2005 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST, 2005, : 85 - 88
  • [44] InGaP/GaAs HBT Broadband Power Amplifier IC with 54.3% Fractional Bandwidth Based on Cascode Structure
    Lee, Wooseok
    Kang, Hyunuk
    Lee, Hwiseob
    Lim, Wonseob
    Bae, Jongseok
    Koo, Hyungmo
    Yoon, Jangsup
    Yang, Youngoo
    2019 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2019, : 1299 - 1302
  • [45] Single-chip dual-band WLAN power amplifier using InGaP/GaAs HBT
    Lin, Chien-Cheng
    Hsu, Yu-Cheng
    35th European Microwave Conference, Vols 1-3, Conference Proceedings, 2005, : 1435 - 1438
  • [46] Influence of collector design on InGaP/GaAs HBT linearity
    Iwamoto, Masaya, 2000, IEEE, Piscataway, NJ, United States (02):
  • [47] Liquid phase oxidation for InGaP/GaAs HBT passivation
    Sze, Po-Wen
    Lee, Kuan-Wei
    Huang, Jian-Jiun
    Yang, Nan-Ying
    Wang, Yeong-Her
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (08) : 1160 - 1166
  • [48] Influence of collector design on InGaP/GaAs HBT linearity
    Iwamoto, M
    Low, TS
    Hutchinson, CP
    Scott, JB
    Cognata, A
    Qin, XH
    Camnitz, LH
    Asbeck, PM
    D'Avanzo, DC
    2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2000, : 757 - 760
  • [49] High-gain GaInP/GaAs HBT monolithic transimpedance amplifier for high-speed optoelectronic receivers
    Mohammadi, S
    Park, JW
    Pavlidis, D
    Dua, C
    Guyaux, JL
    Garcia, JC
    INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 661 - 664
  • [50] State of the art thermal analysis of GaAs/InGaP HBT
    van der Wel, PJ
    Bielen, JA
    Henderson, T
    Middleton, J
    2004 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2004: 26TH ANNIVERSARY: COMPOUNDING YOUR CHIPS IN MONTEREY, 2004, : 79 - 82
12345