Empirical modeling of oxide CMP at chip scale

被引：3
|
作者：
Wolf, H [1 ]
Streiter, R
Rzehak, R
Meyer, F
Springer, G
机构：
[1] Fraunhofer Inst Reliabil & Microintegrat, Dept Micro Devices & Equipment, D-09126 Chemnitz, Germany
[2] Infineon Technol, D-01099 Dresden, Germany
来源：
MICROELECTRONIC ENGINEERING | 2005年 / 82卷 / 3-4期
关键词：
oxide CMP; modeling; chip scale;
D O I：
10.1016/j.mee.2005.07.085
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present an extension of the density-step height model for pattern effects in oxide chemical mechanical planarization. The model is compared to polishing data for processes using different pressure and speed. Agreement with the data is improved especially in the initial regime of polishing before the pad contacts down the areas. Implications for process optimization are discussed. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：686 / 694
页数：9
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