Threshold Voltage Tuning Technique in Gate-All-Around MOSFETs by Utilizing Gate Electrode With Potential Distribution

被引：5

作者：

Park, Jun-Young ^{[1
]}

Bae, Hagyoul ^{[1
]}

Moon, Dong-Il ^{[2
]}

Jeon, Chang-Hoon ^{[3
]}

Choi, Yang-Kyu ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Sch Elect Engn, Daejeon 34141, South Korea

[2] NASA, Ctr Nanotechnol, Ames Res Ctr, Moffett Field, CA 94035 USA

[3] Samsung Elect, Semicond Res & Dev Ctr, Hwasung 445701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 11期

基金：

新加坡国家研究基金会;

关键词：

MOSFET; gate-all-around (GAA); nanowire transistor; tunable threshold voltage; FINFET;

D O I：

10.1109/LED.2016.2612653

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A technique for achieving tunable threshold voltage (VTH) is investigated in a gate-all-around device, which is a representative floating body structure. For this concept, the in-plane gate is designed to be both a driving gate and a control gate. The control gate governs the potential distribution along the gate electrode, which acts as a built-in voltage divider in the MOSFET. During the VTH tuning by the control gate, there is no electrical performance degradation, and modulation of VTH follows a nearly perfect linear tendency. The results are verified by the electrical measurements of the fabricated device and a multi-physics simulator.

引用

页码：1391 / 1394

页数：4

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