High threshold voltage matching performance on gate-all-around MOSFET

被引：2

作者：

Cathignol, Augustin ^{[1
,2
]}

Cros, Antoine ^{[1
,2
]}

Harrison, Samuel ^{[3
]}

Cerrutti, Robin ^{[1
]}

Coronel, Philippe ^{[1
]}

Pouydebasque, Arnaud ^{[3
]}

Rochereau, Krysten ^{[3
]}

Skotnicki, Thomas ^{[1
]}

Ghibaudo, Gerard ^{[2
]}

机构：

[1] STMicroelect, F-38926 Crolles, France

[2] INPG, IMEP, F-38016 Grenoble, France

[3] NXP Semicond, F-38926 Crolles, France

来源：

SOLID-STATE ELECTRONICS | 2007年 / 51卷 / 11-12期

关键词：

D O I：

10.1016/j.sse.2007.09.033

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, threshold voltage matching was measured on multiple gate transistors, and particularly on Gate-All-Around transistors (GAA) with both doped and undoped channels. Good matching performance is demonstrated on doped channel transistors, thanks to the absence of pocket nor halo implants. But most of all, it is shown that suppressing the channel doping allows to drastically reduce the dopant induced fluctuations contribution and provides an A(vt) parameter as low as 1.4 mV mu m, which is one of the best reported result on MOS transistors. (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：1450 / 1457

页数：8

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