Threshold Voltage of Nanoscale Si Gate-all-around MOSFET: Short-channel, Quantum, and Volume Effects

被引：0
|
作者：
Sun, Min-Chul [1 ]
Kim, Hyun Woo [1 ]
Kim, Sang Wan [1 ]
Lee, Jung Han [1 ]
Kim, Hyungjin [1 ]
Park, Byung-Gook [1 ]
机构：
[1] Seoul Natl Univ, ISRC, Seoul 151744, South Korea
来源：
PROCEEDINGS OF THE 2013 IEEE 5TH INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) | 2013年
关键词：
gate-all-around; field-effect transistor; threshold voltage; short-channel effect; quantum effect; volume effect;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The threshold voltage (V-T) control of gate-all-around (GAA) MOSFETs as an extreme case of multi-gate MOSFETs is studied. After breaking down the components constituting V-T into several team, their relative sizes are compared using TCAD technique and analytical calculation of quantum mechanical problem. As a result, the channel diameter is found to be an important knob to control V-T of a GAA MOSFET, which influences on short-channel effect, quantum confinement effect and other effects.
引用
收藏
页码：27 / 29
页数：3
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