A New Substrate Model and Parameter Extraction Method for DNW RF MOSFETs

被引：0

作者：

Liu, Jun ^{[1
]}

Sun, Lingling ^{[1
]}

Yu, Zhiping ^{[1
]}

Condon, Marissa ^{[2
]}

机构：

[1] Hangzhou Dianzi Univ, Key Lab RF Circuits & Syst, Hangzhou, Zhejiang, Peoples R China

[2] Dublin City Univ, Sch Elect Engn, Dublin 9, Ireland

来源：

2010 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS | 2010年

基金：

美国国家科学基金会;

关键词：

RESISTANCE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new compact model for the substrate network of RF MOSFETs with deep n-well (DNW) implantation is presented. A novel test structure proposed in [1] is employed to directly access the characteristics of the substrate in two-port measurements for the extraction of substrate network components. A method is developed to analytically extract the parameters for the substrate network from two-port measurements. The methodology is verified and validated by the excellent match between the measured and simulated output admittances for a 64-finger DNW n-MOSFET in common-source configuration.

引用

页码：2478 / 2481

页数：4

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