A parameter extraction method for a small-signal MOSFET model including substrate parameters

A new method based on the direct determination of parasitic inductances and resistances as well as simple extraction of substrate parameters is proposed for determining small-signal model parameters of RF silicon MOSFETs. This new technique does not require any curve-fitting process to extract extrinsic parasitics, and need only one curve-fitting process to extract all substrate model parameters, thus yielding much simpler than the previous extraction methods. The simulated S-parameters show good agreements with measured ones, verifying the accuracy of the new extraction technique.