A New Substrate Model and Parameter Extraction Method for DNW RF MOSFETs

被引：0
|
作者：
Liu, Jun [1 ]
Sun, Lingling [1 ]
Yu, Zhiping [1 ]
Condon, Marissa [2 ]
机构：
[1] Hangzhou Dianzi Univ, Key Lab RF Circuits & Syst, Hangzhou, Zhejiang, Peoples R China
[2] Dublin City Univ, Sch Elect Engn, Dublin 9, Ireland
来源：
2010 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS | 2010年
基金：
美国国家科学基金会;
关键词：
RESISTANCE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new compact model for the substrate network of RF MOSFETs with deep n-well (DNW) implantation is presented. A novel test structure proposed in [1] is employed to directly access the characteristics of the substrate in two-port measurements for the extraction of substrate network components. A method is developed to analytically extract the parameters for the substrate network from two-port measurements. The methodology is verified and validated by the excellent match between the measured and simulated output admittances for a 64-finger DNW n-MOSFET in common-source configuration.
引用
收藏
页码：2478 / 2481
页数：4
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