A New Method for Series Resistance Extraction of Nanometer MOSFETs

被引：17

作者：

Trevisoli, Renan ^{[1
]}

Doria, Rodrigo Trevisoli ^{[1
]}

de Souza, Michelly ^{[1
]}

Barraud, Sylvain ^{[2
]}

Vinet, Maud ^{[2
]}

Casse, Mikael ^{[2
]}

Reimbold, Gilles ^{[2
]}

Faynot, Olivier ^{[2
]}

Ghibaudo, Gerard ^{[3
,4
]}

Pavanello, Marcelo Antonio ^{[1
]}

机构：

[1] Ctr Univ FEI, BR-09850901 Sao Bernardo Do Campo, Brazil

[2] Commissariat Energie Atom & Energies Alternat, LETI, F-38054 Grenoble, France

[3] Minatec, Inst Microelect Electromagnetisme & Photon, F-38016 Grenoble, France

[4] Minatec, Lab Hyperfrequences & Caracterisat, F-38016 Grenoble, France

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 07期

基金：

巴西圣保罗研究基金会;

关键词：

Extraction method; MOSFETs; nanowires; series resistance; EFFECTIVE CHANNEL-LENGTH; MOBILITY DEGRADATION; THRESHOLD VOLTAGE; DC METHOD; PERFORMANCE; MODEL;

D O I：

10.1109/TED.2017.2704928

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a new method for the series resistance extraction in ultimate MOSFETs using a single drain current versus gate voltage characteristic curve. The method is based on the Y-function curve, such that the series resistance is obtained through the curve of the total resistance as a function of the inverse of the Y-function. It includes both first-and second-order mobility degradation factors. To validate the proposed method, numerical simulations have been performed for devices of different characteristics. Besides, the method applicability has been demonstrated for experimental silicon nanowires and FinFETs. Apart from that, devices with different channel lengths can be used to estimate the mobility degradation factor influence.

引用

页码：2797 / 2803

页数：7

共 50 条

[1] Series Resistance and Mobility Extraction Method in Nanoscale MOSFETs
Chen, William Po-Nien
Su, Pin
Goto, Ken-Ichi
Diaz, Carlos H.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (01) : H34 - H38
[2] Method for series resistance extraction using the saturation region of MOSFETs
Popescu, AE
Rusu, A
Steriu, D
Chovet, A
Ionescu, AM
1997 21ST INTERNATIONAL CONFERENCE ON MICROELECTRONICS - PROCEEDINGS, VOLS 1 AND 2, 1997, : 289 - 292
[3] A new series resistance and mobility extraction method by BSIM model for nano-scale MOSFETs
Chen, William P. N.
Su, P.
Wang, J. S.
Lien, C. H.
Chang, C. H.
Goto, K.
Diaz, C. H.
2006 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS, 2006, : 143 - +
[4] On the RF Series Resistance Extraction of Nanoscale MOSFETs
Choi, Gil-Bok
Hong, Seung-Ho
Jung, Sung-Woo
Jeong, Yoon-Ha
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2008, 18 (10) : 689 - 691
[5] A novel channel resistance ratio method for effective channel length and series resistance extraction in MOSFETs
Niu, GF
Mathew, SJ
Cressler, JD
Subbanna, S
SOLID-STATE ELECTRONICS, 2000, 44 (07) : 1187 - 1189
[6] A NEW EXTRACTION METHOD OF PARASITIC RESISTANCE FOR POLY-CONNECTED MOSFETS
Ye, Haohua
Tseng, Chien-Lung
Lian, Bowen
2016 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC), 2016,
[7] Extraction method for substrate resistance of RF MOSFETs
Han, JH
Je, M
Shin, H
ICMTS 2002:PROCEEDINGS OF THE 2002 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 2002, : 37 - 40
[8] A new analytical method for the extraction of series resistance of solar cell
Yang, Guihong
Yu, Xianwei
Lun, Shuxian
2014 INTERNATIONAL CONFERENCE ON MECHATRONICS AND CONTROL (ICMC), 2014, : 254 - 257
[9] A New Series Resistance Extraction Method for Junctionless Nanowire Transistors
Trevisoli, Renan
Doria, Rodrigo T.
de Souza, Michelly
Barraud, Sylvain
Vinet, Maud
Pavanello, Marcelo A.
2016 31ST SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO), 2016,
[10] A Method for Series-Resistance-Immune Extraction of Low-Frequency Noise Parameters in Nanoscale MOSFETs
Tataridou, Angeliki
Ghibaudo, Gerard
Theodorou, Christoforos
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (11) : 4568 - 4572

← 1 2 3 4 5 →