On the RF Series Resistance Extraction of Nanoscale MOSFETs

被引：10
|
作者：
Choi, Gil-Bok [1 ]
Hong, Seung-Ho [2 ]
Jung, Sung-Woo
Jeong, Yoon-Ha [1 ,2 ]
机构：
[1] Pohang Univ Sci & Technol, Gyeongbuk 790784, South Korea
[2] NCNT, Gyeongbuk 790784, South Korea
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2008年 / 18卷 / 10期
关键词：
Extraction; modeling; metal oxide semiconductor field-effect transistor (MOSFET); radio frequency (RF); series resistance; small signal;
D O I：
10.1109/LMWC.2008.2003472
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new extraction method of series resistance based on the radio frequency S-parameter measurement for sub -0.1 mu m, metal oxide semiconductor field-effect transistor is presented. The practical limit of conventional methods is analyzed from measurement and simulation. From this analysis, analytical expressions are derived, and linear regression techniques are used to extract the series resistances. The proposed method improves the accuracy and reduces the measurement frequency.
引用
收藏
页码：689 / 691
页数：3
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