Extraction and modeling of gate electrode resistance in RF MOSFETs

被引：2
|
作者：
Kang, M [1 ]
Kang, IM [1 ]
Shin, H [1 ]
机构：
[1] Seoul Natl Univ, ISRC, Seoul 151742, South Korea
来源：
2005 INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY | 2005年
关键词：
RF mosfet; gate resistance; modeling; extraction; electrode;
D O I：
10.1109/ICICDT.2005.1502631
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A simple and accurate method is presented for extraction of the effective gate resistance of RF MOSFETs. Analytical physical-based gate resistance model is developed in this paper. Extracted effective gate resistance is compared to measured data and verified with the model. The proposed gate resistance model can accurately predict not only the bias dependency but also the dependence on the number of fingers.
引用
收藏
页码：207 / 210
页数：4
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