A New Method for Series Resistance Extraction of Nanometer MOSFETs

被引：17

作者：

Trevisoli, Renan ^{[1
]}

Doria, Rodrigo Trevisoli ^{[1
]}

de Souza, Michelly ^{[1
]}

Barraud, Sylvain ^{[2
]}

Vinet, Maud ^{[2
]}

Casse, Mikael ^{[2
]}

Reimbold, Gilles ^{[2
]}

Faynot, Olivier ^{[2
]}

Ghibaudo, Gerard ^{[3
,4
]}

Pavanello, Marcelo Antonio ^{[1
]}

机构：

[1] Ctr Univ FEI, BR-09850901 Sao Bernardo Do Campo, Brazil

[2] Commissariat Energie Atom & Energies Alternat, LETI, F-38054 Grenoble, France

[3] Minatec, Inst Microelect Electromagnetisme & Photon, F-38016 Grenoble, France

[4] Minatec, Lab Hyperfrequences & Caracterisat, F-38016 Grenoble, France

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 07期

基金：

巴西圣保罗研究基金会;

关键词：

Extraction method; MOSFETs; nanowires; series resistance; EFFECTIVE CHANNEL-LENGTH; MOBILITY DEGRADATION; THRESHOLD VOLTAGE; DC METHOD; PERFORMANCE; MODEL;

D O I：

10.1109/TED.2017.2704928

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a new method for the series resistance extraction in ultimate MOSFETs using a single drain current versus gate voltage characteristic curve. The method is based on the Y-function curve, such that the series resistance is obtained through the curve of the total resistance as a function of the inverse of the Y-function. It includes both first-and second-order mobility degradation factors. To validate the proposed method, numerical simulations have been performed for devices of different characteristics. Besides, the method applicability has been demonstrated for experimental silicon nanowires and FinFETs. Apart from that, devices with different channel lengths can be used to estimate the mobility degradation factor influence.

引用

页码：2797 / 2803

页数：7

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