A New Substrate Model and Parameter Extraction Method for DNW RF MOSFETs

被引：0
|
作者：
Liu, Jun [1 ]
Sun, Lingling [1 ]
Yu, Zhiping [1 ]
Condon, Marissa [2 ]
机构：
[1] Hangzhou Dianzi Univ, Key Lab RF Circuits & Syst, Hangzhou, Zhejiang, Peoples R China
[2] Dublin City Univ, Sch Elect Engn, Dublin 9, Ireland
来源：
2010 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS | 2010年
基金：
美国国家科学基金会;
关键词：
RESISTANCE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new compact model for the substrate network of RF MOSFETs with deep n-well (DNW) implantation is presented. A novel test structure proposed in [1] is employed to directly access the characteristics of the substrate in two-port measurements for the extraction of substrate network components. A method is developed to analytically extract the parameters for the substrate network from two-port measurements. The methodology is verified and validated by the excellent match between the measured and simulated output admittances for a 64-finger DNW n-MOSFET in common-source configuration.
引用
收藏
页码：2478 / 2481
页数：4
相关论文
共 50 条
  • [1] A small-signal RF model and its parameter extraction for substrate effects in RF MOSFETs
    Lee, S
    Kim, CS
    Yu, HK
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (07) : 1374 - 1379
  • [2] Extraction method for substrate resistance of RF MOSFETs
    Han, JH
    Je, M
    Shin, H
    ICMTS 2002:PROCEEDINGS OF THE 2002 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 2002, : 37 - 40
  • [3] An analytical extraction method for scalable substrate resistance model in RF MOSFETs
    Kao, Shih-Piniz
    Lee, Chih-Yuan
    Wang, Chuan-Yu
    Dene, Joseph Der-Son
    Chang, Chen-Chai
    Kao, Chin-Hsing
    2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2, 2007, : 441 - +
  • [4] Parameter extraction of accurate and scaleable substrate resistance components in RF MOSFETs
    Cheng, YH
    Matloubian, M
    IEEE ELECTRON DEVICE LETTERS, 2002, 23 (04) : 221 - 223
  • [5] A new substrate network model and parameter extraction for RF nano-CMOS
    Choi, Gil-Bok
    Hong, Seung-Ho
    Kang, Hee-Sung
    Jeong, Yoon-Ha
    IEEE NMDC 2006: IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE 2006, PROCEEDINGS, 2006, : 508 - +
  • [6] Extraction method for cross-type substrate resistances of RF MOSFETs based on PSP model
    Kang, I. M.
    Shin, H.
    ELECTRONICS LETTERS, 2010, 46 (11) : 784 - U79
  • [7] An analytical parameter extraction of the small-signal model for RF MOSFETs
    Chi, Y. S.
    Lu, J. X.
    Zhang, S. Y.
    Wu, Z. J.
    Huang, F. Y.
    2005 IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, PROCEEDINGS, 2005, : 555 - 558
  • [8] An improved and simple parameter extraction method and scaling model for RF MOSFETs up to 40GHz
    Cheng, Jiali
    Han, Bo
    Li, Shoulin
    Zhai, Guohua
    Sun, Ling
    Gao, Jianjun
    INTERNATIONAL JOURNAL OF ELECTRONICS, 2012, 99 (05) : 707 - 718
  • [9] Extraction of substrate resistances of RF MOSFETs with various geometries
    Han, J
    Je, M
    Shin, H
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 (02) : 224 - 228
  • [10] Accurate small-signal model and its parameter extraction in RF silicon MOSFETs
    Jang, JJ
    Yu, ZP
    Dutton, RW
    2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2003, : 2109 - 2111
12345